Abstract: The development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates ...
Abstract: The silicon (Si) fin-field-effect-transistor (FinFET) technology revolutionized the semiconductor industry by enabling scaling down to the advanced 4-nm node. Even FinFET has limitations, ...
Spc. Klay Walker and Spc. Alexander Best with the 4th Space Company, 1st Space Battalion, work on a Mobile Integrated Ground Suite at Fort Carson, Colorado, April 30, 2025. (Dottie White/U.S. Army) ...
First High-Voltage MOSFET Product from the Platform Meets Demands for High Efficiency, Power Density, and Robust Performance in Next‑Gen Power and Solar Inverter Applications Alpha and Omega ...
REDSTONE ARSENAL, Ala. — To meet the rising threats in missile defense and the space domain, the U.S Army is now accepting applications for its newest military occupational specialty, or MOS.
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